Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown
نویسندگان
چکیده
p-n diodes with avalanche breakdown Zongyang Hu, Kazuki Nomoto, Bo Song, Mingda Zhu, Meng Qi, Ming Pan, Xiang Gao, Vladimir Protasenko, Debdeep Jena, and Huili Grace Xing School of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USA Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA IQE RF LLC, Somerset, New Jersey 08873, USA Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA
منابع مشابه
High-k Dielectric Passivation for GaN Diode with a Field Plate Termination
Vertical structured Gallium nitride (GaN) p-n junction diodes with improved breakdown properties have been demonstrated using high-k dielectric passivation underneath the field plate. Simulation results at a reverse voltage of 1 kV showed that the maximum electric field near the mesa-etched p-n junction edges covered with film of dielectric constant k = 10 was reduced to 2.0 MV/cm from 3.0 MV/c...
متن کاملAn enhanced surface passivation effect in InGaN/GaN disk-in-nanowire light emitting diodes for mitigating Shockley-Read-Hall recombination.
We present a detailed study of the effects of dangling bond passivation and the comparison of different sulfide passivation processes on the properties of InGaN/GaN quantum-disk (Qdisk)-in-nanowire based light emitting diodes (NW-LEDs). Our results demonstrated the first organic sulfide passivation process for nitride nanowires (NWs). The results from Raman spectroscopy, photoluminescence (PL) ...
متن کاملHigh breakdown single-crystal GaN p-n diodes by molecular beam epitaxy
Molecular beam epitaxy grown GaN p-n vertical diodes are demonstrated on single-crystal GaN substrates. A low leakage current <3 nA/cm is obtained with reverse bias voltage up to !20 V. With a 400 nm thick n-drift region, an on-resistance of 0.23 mX cm is achieved, with a breakdown voltage corresponding to a peak electric field of "3.1 MV/cm in GaN. Single-crystal GaN substrates with very low d...
متن کاملAlGaN/GaN Schottky Barrier Diodes Employing Diamond-like Carbon passivation
AlGaN/GaN Schottky Barrier Diodes (SBDs) employing the Diamond-like Carbon (DLC) passivation was proposed. The reverse blocking characteristics of the AlGaN/GaN SBD is degraded by the electron trapping effect through the surface trap states. In order to suppress the electron trapping effect and increase the breakdown voltage of AlGaN/GaN SBDs, the surface passivation or treatment should be perf...
متن کاملReverse-bias leakage current reduction in GaN Schottky diodes by electrochemical surface treatment
An electrochemical surface treatment has been developed that decreases the reverse-bias leakage current in Schottky diodes fabricated on GaN grown by molecular-beam epitaxy ~MBE!. This treatment suppresses current flow through localized leakage paths present in MBE-grown GaN, while leaving other diode characteristics, such as the Schottky barrier height, largely unaffected. A reduction in leaka...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2015